 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| APTGT300A60TG Phase leg Trench + Field Stop IGBT Power Module VBUS NTC2 VCES = 600V IC = 300A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration * Internal thermistor for temperature monitoring Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant Q1 G1 E1 OUT Q2 G2 E2 0/VBU S NTC1 G2 E2 OUT VBUS 0/VBUS OUT E1 G1 E2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 150C Max ratings 600 430 300 450 20 935 600A @ 550V Unit V A V W April, 2009 1-5 APTGT300A60TG - Rev 1 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGT300A60TG All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 300A Tj = 150C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 350 1.9 6.5 500 Unit A V V nA 5.0 Dynamic Characteristics Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=15V, IC=300A VCE=300V Inductive Switching (25C) VGE = 15V VBus = 300V IC = 300A RG = 2.2 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 300A RG = 2.2 Tj = 25C Tj = 150C Tj = 25C Tj = 150C VGE 15V ; VBus = 360V tp 6s ; Tj = 150C VGE = 15V VBus = 300V IC = 300A RG = 2.2 Min Typ 18.4 1.16 0.54 3.2 115 45 225 55 130 50 300 70 1.7 3 8.2 10.6 1500 ns Max Unit nF C ns mJ mJ A Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 300A VR = 300V IF = 300A VGE = 0V Test Conditions VR=600V Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Min 600 Typ Max 150 400 300 1.6 1.5 130 225 13.7 29 3.2 7 2 Unit V A A V ns C mJ April, 2009 2-5 APTGT300A60TG - Rev 1 di/dt =4000A/s www.microsemi.com APTGT300A60TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C RT = R25 1 exp B25 / 85 T - T 25 T: Thermistor temperature 1 RT: Thermistor value at T Min Typ 50 5 3952 4 Max Unit k % K % Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.16 0.29 175 125 100 4.7 160 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To Heatsink M5 SP4 Package outline (dimensions in mm) ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT300A60TG - Rev 1 April, 2009 APTGT300A60TG Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 500 400 TJ=125C VGE=13V TJ = 150C VGE=19V 500 TJ=25C 400 IC (A) IC (A) 300 200 100 TJ=25C TJ=150C 300 200 VGE=15V VGE=9V 100 0 0 0 0.5 1 1.5 2 2.5 VCE (V) Transfert Characteristics TJ=25C 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5 Energy losses vs Collector Current 16 12 E (mJ) 8 4 VCE = 300V VGE = 15V RG = 2.2 TJ = 150C Eoff 500 400 300 200 100 0 5 IC (A) Er TJ=125C TJ=150C TJ=25C Eon 0 6 7 8 VGE (V) 9 10 11 0 100 200 IC (A) Reverse Bias Safe Operating Area 700 Eoff Eoff 300 400 500 Switching Energy Losses vs Gate Resistance 20 16 E (mJ) 12 8 4 Eon 600 500 IC (A) 400 300 200 100 0 15 0 VGE=15V TJ=150C RG=2.2 VCE = 300V VGE =15V IC = 300A TJ = 150C Er 0 0 2.5 5 7.5 10 12.5 Gate Resistance (ohms) 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.18 Thermal Impedance (C/W) 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.9 IGBT 0.05 0 0.00001 Rectangular Pulse Duration in Seconds www.microsemi.com 4-5 APTGT300A60TG - Rev 1 April, 2009 APTGT300A60TG Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 120 100 80 60 40 20 0 0 100 200 IC (A) 300 400 Hard switching ZVS ZCS VCE=300V D=50% RG=2.2 TJ=150C Forward Characteristic of diode 500 400 300 TJ=125C IF (A) Tc=85C 200 100 0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4 TJ=150C TJ=25C maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Diode 0.9 0.7 0.05 0 0.00001 Rectangular Pulse Duration in Seconds Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT300A60TG - Rev 1 April, 2009 |
Price & Availability of APTGT300A60TG
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |